DONOR GETTERING IN GAAS BY RARE-EARTH ELEMENTS

[1] BAGRAEV NT, 1984, SOV PHYS SEMICOND+, V18, P49

[2] INCORPORATION OF ERBIUM IN GAAS BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 2803 - 2806

[3] GATSOEV KA, 1983, SOV PHYS SEMICOND+, V17, P1373

[4] YTTERBIUM-DOPED INP LIGHT-EMITTING DIODE AT 1.0-MU-M [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 870 - 872

[5] Hemstreet L. A., 1986, Materials Science Forum, V10-12, P85, DOI 10.4028/www.scientific.net/MSF.10-12.85

[6] ILEGEMS M, 1985, TECHNOLOGY PHYSICS M, P83

[7] KASATKIN VA, 1985, SOV PHYS SEMICOND+, V19, P221

[8] RARE-EARTH IONS IN LPE III-V SEMICONDUCTORS [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) : 741 - 744

[9] KORBER W, 1988, APPL PHYS LETT, V52, P114, DOI 10.1063/1.99067

[10] KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927

[1] BAGRAEV NT, 1984, SOV PHYS SEMICOND+, V18, P49

[2] INCORPORATION OF ERBIUM IN GAAS BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 2803 - 2806

[3] GATSOEV KA, 1983, SOV PHYS SEMICOND+, V17, P1373

[4] YTTERBIUM-DOPED INP LIGHT-EMITTING DIODE AT 1.0-MU-M [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 870 - 872

[5] Hemstreet L. A., 1986, Materials Science Forum, V10-12, P85, DOI 10.4028/www.scientific.net/MSF.10-12.85

[6] ILEGEMS M, 1985, TECHNOLOGY PHYSICS M, P83

[7] KASATKIN VA, 1985, SOV PHYS SEMICOND+, V19, P221

[8] RARE-EARTH IONS IN LPE III-V SEMICONDUCTORS [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) : 741 - 744

[9] KORBER W, 1988, APPL PHYS LETT, V52, P114, DOI 10.1063/1.99067

[10] KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927