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FIELD EFFECT MEASUREMENT ON SILICON AND GERMANIUM WITH HIGH FREQUENCY CURRENT

被引：5
作者：
GRAFE, W
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1971年 / 4卷 / 02期
关键词：
D O I：
10.1002/pssa.2210040210
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：369 / &
相关论文
共 6 条
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[5]  
GRAFE W, IN PRESS
[6]   SOME MEASUREMENTS OF SURFACE PROPERTIES OF SILICON BY DC, AC AND PULSED FIELD EFFECTS [J].
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