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THE EFFECTS OF DRIED O-2 ON THE SURFACE CONDUCTANCE OF SILICON

被引：4
作者：
EINSPRUCH, NG
机构：
来源：
PHYSICA STATUS SOLIDI | 1962年 / 2卷 / 02期
关键词：
D O I：
10.1002/pssb.19620020207
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：188 / 193
页数：6
相关论文
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[4]   CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].
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