A-C FIELD EFFECT MEASUREMENTS ON SILICON

被引：3

作者：

EINSPRUCH, NG

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1961年 / 108卷 / 12期

关键词：

D O I：

10.1149/1.2427977

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1164 / 1166

页数：3

共 13 条

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[4]

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[8] SURFACE MOBILITY IN GERMANIUM AND SILICON [J].

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[9]

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[10] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J].

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