ETCHING OF SILICON-CARBIDE BY CHLORINE

被引:16
作者
BALOOCH, M
OLANDER, DR
机构
[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY,DEPT NUCL ENGN,BERKELEY,CA 94720
基金
美国国家科学基金会;
关键词
D O I
10.1016/0039-6028(92)90243-Y
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The reaction of Cl2 with polycrystalline beta-silicon carbide was studied by the modulated molecular beam-mass spectrometric detection method. The temperature range was 300. 1000 K and beam intensities between 10(16) and 10(17)/cm2 s were employed. The sole silicon-bearing gaseous product was SiCl4, which was produced with a maximum reaction probability of 5 x 10(-4) at 740 K. At higher temperatures, the reaction probability dropped precipitously, probably because of decomposition of Si-Cl surface intermediates prior to further reaction to produce the SiCl4 etch product. The CCl4 reaction product was also observed, but with a reaction probability approximately 4 times lower than that of SiCl4. Buildup of an ash of unreacted carbon on the surface was demonstrated by scanning Auger microscopy. Ion bombardment during reaction had little effect on increasing product yields.
引用
收藏
页码:321 / 334
页数:14
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