COLUMN III AND V ORDERING IN INGAASP AND GAASP GROWN ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：46

作者：

PLANO, WE ^{[1
]}

NAM, DW ^{[1
]}

MAJOR, JS ^{[1
]}

HSIEH, KC ^{[1
]}

HOLONYAK, N ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 25期

关键词：

D O I：

10.1063/1.100201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2537 / 2539

页数：3

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