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IMPURITY-INDUCED LAYER DISORDERING OF HIGH GAP INY(ALXGA1-X)1-YP HETEROSTRUCTURES

被引：31
作者：
DEPPE, DG
NAM, DW
HOLONYAK, N
HSIEH, KC
BAKER, JE
KUO, CP
FLETCHER, RM
OSENTOWSKI, TD
CRAFORD, MG
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] HEWLETT PACKARD CO,DIV OPTOELECTR,SAN JOSE,CA 95131
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 17期
关键词：
D O I：
10.1063/1.99132
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1413 / 1415
页数：3
相关论文
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