BERYLLIUM DIFFUSION ACROSS GAAS/(AL,GA)AS HETEROJUNCTIONS AND GAAS/ALAS SUPERLATTICES DURING MBE GROWTH

被引:20
作者
DEVINE, RLS [1 ]
FOXON, CT [1 ]
JOYCE, BA [1 ]
CLEGG, JB [1 ]
GOWERS, JP [1 ]
机构
[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 44卷 / 02期
关键词
D O I
10.1007/BF00626423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:195 / 200
页数:6
相关论文
共 15 条
[1]   IMPURITY INDUCED DISORDERING OF STRAINED GAP-GAAS1-XPX(X-APPROXIMATELY-0.6) SUPER-LATTICES [J].
CAMRAS, MD ;
HOLONYAK, N ;
HESS, K ;
LUDOWISE, MJ ;
DIETZE, WT ;
LEWIS, CR .
APPLIED PHYSICS LETTERS, 1983, 42 (02) :185-187
[2]  
DEVINE RLS, 1985, THESIS U GLASGOW
[3]   ANOMALOUS REDISTRIBUTION OF BERYLLIUM IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
ENQUIST, P ;
WICKS, GW ;
EASTMAN, LF ;
HITZMAN, C .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) :4130-4134
[4]   SILICON MIGRATION DURING MBE GROWTH OF DOPED (AL,GA)AS FILMS [J].
GONZALEZ, L ;
CLEGG, JB ;
HILTON, D ;
GOWERS, JP ;
FOXON, CT ;
JOYCE, BA .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (03) :237-241
[5]   DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL [J].
GOSELE, U ;
MOREHEAD, F .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4617-4619
[6]  
HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110
[7]   EFFECTS OF SUBSTRATE TEMPERATURES ON THE DOPING PROFILES OF SI IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES [J].
INOUE, K ;
SAKAKI, H ;
YOSHINO, J ;
YOSHIOKA, Y .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :973-975
[8]   EFFECTS OF BE AND SI ON DISORDERING OF THE ALAS/GAAS SUPERLATTICE [J].
KAWABE, M ;
SHIMIZU, N ;
HASEGAWA, F ;
NANNICHI, Y .
APPLIED PHYSICS LETTERS, 1985, 46 (09) :849-850
[9]  
LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159
[10]   DIFFUSION AND INTERDIFFUSION IN ZN-DISORDERED ALAS-GAAS SUPER-LATTICES [J].
LEE, JW ;
LAIDIG, WD .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) :147-165