SURFACE-PLASMON EXCITATION BY TUNNELING ELECTRONS IN GAAS-PB TUNNEL JUNCTIONS

被引：10

作者：

TSUI, DC

BARKER, AS

机构：

[1] Bell Telephone Laboratories, Murray Hill

来源：

PHYSICAL REVIEW | 1969年 / 186卷 / 02期

关键词：

D O I：

10.1103/PhysRev.186.590

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Carrier-concentration-dependent structure in curves of d2IdV2 versus bias in n-type GaAs-Pb tunnel junctions is compared with the bulk-plasmon and surface-plasmon energies of the GaAs sample. The bulk-plasmon energy is determined directly from infrared-reflectivity measurements. The conclusion is consistent with the previous suggestion that this structure can be interpreted as due to excitation of surface plasmons in the GaAs electrode by tunneling electrons. © 1969 The American Physical Society.

引用

页码：590 / &

共 6 条

[1]

BARKER AS, 1966, OPTICAL PROPERTIES E

[2] PLASMON EXCITATION BY ELECTRON TUNNELING [J].

DUKE, CB .

PHYSICAL REVIEW, 1969, 186 (02) :588-&

[3] TUNNELING MEASUREMENT OF ELECTRON-PLASMON INTERACTION IN DEGENERATE SEMICONDUCTORS [J].

DUKE, CB ;

RICE, MJ ;

STEINRIS.F .

PHYSICAL REVIEW, 1969, 181 (02) :733-&

[4] THEORY OF INELASTIC ELECTRON-SURFACE-PLASMON INTERACTIONS IN METAL-SEMICONDUCTOR TUNNEL JUNCTIONS [J].

NGAI, KL ;

ECONOMOU, EN ;

COHEN, MH .

PHYSICAL REVIEW LETTERS, 1969, 22 (25) :1375-&

[5] OBSERVATIONS OF SURFACE PLASMON EXCITATION BY TUNNELING ELECTRONS IN GAAS-PB TUNNEL JUNCTIONS [J].

TSUI, DC .

PHYSICAL REVIEW LETTERS, 1969, 22 (07) :293-&

[6] EVIDENCE FOR HOLE-TO-PHONON INTERACTION FROM TUNNELING MEASUREMENTS IN GAAS-PB JUNCTIONS [J].

TSUI, DC .

PHYSICAL REVIEW LETTERS, 1968, 21 (14) :994-&

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