INP/INGAASP BURIED MESA RIDGE LASER - A NEW RIDGE LASER WITH REDUCED LEAKAGE CURRENTS

被引：8

作者：

JUNG, H

SCHLOSSER, E

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 22期

关键词：

D O I：

10.1063/1.101155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2171 / 2173

页数：3

共 7 条

[1] CW OPERATION OF GAINASP BURIED RIDGE STRUCTURE LASER AT 1.5-MU-M GROWN BY LP-MOCVD [J].

BLONDEAU, R ;

RAZEGHI, M ;

KRAKOWSKI, M ;

VILAIN, G ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1984, 20 (21) :850-851

[2] LOW-THRESHOLD INGAASP RIDGE WAVEGUIDE LASERS AT 1.3-MU-M [J].

KAMINOW, IP ;

STULZ, LW ;

KO, JS ;

DENTAI, AG ;

NAHORY, RE ;

DEWINTER, JC ;

HARTMAN, RL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) :1312-1319

[3] HIGH-YIELD MANUFACTURE OF VERY LOW THRESHOLD, HIGH-RELIABILITY, 1.30-MU-M BURIED HETEROSTRUCTURE LASER-DIODES GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

KRAKOWSKI, M ;

BLONDEAU, R ;

KAZMIERSKI, K ;

RAZEGHI, M ;

RICCIARDI, J ;

HIRTZ, P ;

DECREMOUX, B .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (10) :1470-1474

[4] VERY LOW THRESHOLD BURIED RIDGE STRUCTURE LASERS EMITTING AT 1.3 MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

BLONDEAU, R ;

KAZMIERSKI, K ;

KRAKOWSKI, M ;

DUCHEMIN, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :131-133

[5] HIGH-TEMPERATURE CW OPERATION OF PLANAR BURIED-RIDGE STRUCTURE LASERS AT GAMMA=1.5-MU-M [J].

THULKE, W ;

ZACH, A .

ELECTRONICS LETTERS, 1988, 24 (16) :992-993

[6]

THULKE W, 1988, SIEMENS FORSCH ENTW, V17, P1

[7]

THULKE W, 1988, 11TH P IEEE SEM LAS, V5, P214

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