HIGH-TEMPERATURE CW OPERATION OF PLANAR BURIED-RIDGE STRUCTURE LASERS AT GAMMA=1.5-MU-M

被引：6

作者：

THULKE, W

ZACH, A

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 16期

关键词：

D O I：

10.1049/el:19880675

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：992 / 993

页数：2

共 10 条

[1] LOW-THRESHOLD RIDGE WAVE-GUIDE LASERS AT LAMBDA =1.5-MU-M [J].

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WHEELER, SA ;

PLUMB, RG ;

MUSK, RW .

ELECTRONICS LETTERS, 1986, 22 (21) :1145-1147

[2] THE EFFECTS OF LOSS AND NONRADIATIVE RECOMBINATION ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN 1.5-1.6-MU-M GALNASP/INP LASERS [J].

ASADA, M ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :917-923

[3] CW OPERATION OF GAINASP BURIED RIDGE STRUCTURE LASER AT 1.5-MU-M GROWN BY LP-MOCVD [J].

BLONDEAU, R ;

RAZEGHI, M ;

KRAKOWSKI, M ;

VILAIN, G ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1984, 20 (21) :850-851

[4] VERY LOW-THRESHOLD 1.53-MUM DFB LASERS BY VPE TRANSPORT [J].

BROBERG, B ;

NILSSON, S ;

TANBUNEK, T .

ELECTRONICS LETTERS, 1987, 23 (12) :624-625

[5] EFFECT OF ACTIVE LAYER THICKNESS ON DIFFERENTIAL QUANTUM EFFICIENCY OF 1.3 AND 1.55 MU-M INGAASP INJECTION-LASERS [J].

CHENG, WH ;

SU, CB ;

RENNER, D .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :3-5

[6] HIGH-RELIABILITY SEMICONDUCTOR-LASERS FOR OPTICAL COMMUNICATIONS [J].

HIRAO, M ;

MIZUISHI, K ;

NAKAMURA, M .

IEEE JOURNAL ON SELECTED AREAS IN COMMUNICATIONS, 1986, 4 (09) :1494-1501

[7] HIGH-POWER OPERATION OF DCPBH LASERS EMITTING AT 1.52-MU-M WAVELENGTH [J].

RENNER, D ;

COLLAR, AJ ;

GREENE, PD ;

HENSHALL, GD .

ELECTRONICS LETTERS, 1985, 21 (22) :1006-1007

[8]

THULKE W, 1988, SIEMENS FORSCH ENTW, V17, P1

[9]

THULKE W, 1986, 12TH P EUR C OPT C 3, P57

[10] HIGH-SPEED 1.3-MU-M DFB LASER WITH MODIFIED DCPBH STRUCTURE [J].

WUNSTEL, K ;

MOZER, A ;

SCHILLING, M ;

LUZ, G ;

LOSCH, K ;

SCHWEIZER, H ;

SCHEMMEL, G ;

HILDEBRAND, O .

ELECTRONICS LETTERS, 1986, 22 (21) :1144-1145

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