MEDIUM-ENERGY ION-SCATTERING INVESTIGATION OF HOMOEPITAXY ON H-TERMINATED SI(111)

被引：8

作者：

COPEL, M

TROMP, RM

机构：

[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598

来源：

SURFACE SCIENCE | 1995年 / 337卷 / 1-2期

关键词：

CRYSTALLINE-AMORPHOUS INTERFACES; EPITAXY; HYDROGEN; MEDIUM ENERGY ION SCATTERING (MEIS); SILICON;

D O I：

10.1016/0039-6028(95)80035-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated homoepitaxy on H terminated unreconstructed Si(111) at low temperatures. Epitaxy on the (1 x 1) surface requires growth temperatures about 80 degrees C higher than on the bare surface to achieve similar crystal quality. Even at higher temperatures (300 degrees C to 400 degrees C), where excellent growth is expected, we observe a degradation in the surface ordering on the H terminated surface, not observed for growth on the bare surface.

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收藏

页码：L773 / L776

页数：4

相关论文

共 17 条

[1] EFFECT OF HYDROGEN ON SURFACE ROUGHENING DURING SI HOMOEPITAXIAL GROWTH [J].

ADAMS, DP ;

YALISOVE, SM ;

EAGLESHAM, DJ .

APPLIED PHYSICS LETTERS, 1993, 63 (26) :3571-3573

[2] STRUCTURE OF THE H-SATURATED SI(100) SURFACE [J].

BOLAND, JJ .

PHYSICAL REVIEW LETTERS, 1990, 65 (26) :3325-3328

[3] ELASTIC RECOIL DETECTION FOR MEDIUM-ENERGY ION-SCATTERING [J].

COPEL, M ;

TROMP, RM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1993, 64 (11) :3147-3152

[4] H-COVERAGE DEPENDENCE OF SI(001) HOMOEPITAXY [J].

COPEL, M ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1994, 72 (08) :1236-1239

[5] RELAXATION AND H-COVERAGE OF AMMONIUM FLUORIDE TREATED SI(111) [J].

COPEL, M ;

CULBERTSON, RJ ;

TROMP, RM .

APPLIED PHYSICS LETTERS, 1994, 65 (18) :2344-2346

[6] LIMITING THICKNESS HEPI FOR EPITAXIAL-GROWTH AND ROOM-TEMPERATURE SI GROWTH ON SI(100) [J].

EAGLESHAM, DJ ;

GOSSMANN, HJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 65 (10) :1227-1230

[7] STUDIES OF CRYSTALLINE DEFECTS DURING THE EARLY STAGES OF GROWTH OF SI ON SI(100) AT LOW-TEMPERATURES BY SPOT PROFILE ANALYSIS OF LEED (SPA-LEED) [J].

FALTA, J ;

HENZLER, M .

SURFACE SCIENCE, 1992, 269 :14-21

[8] DOPING OF SI THIN-FILMS BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J].

GOSSMANN, HJ ;

UNTERWALD, FC ;

LUFTMAN, HS .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8237-8241

[9] THE INITIAL-STAGES OF EPITAXIAL-GROWTH OF SILICON ON SI(100)-2 X-1 [J].

HEUN, S ;

FALTA, J ;

HENZLER, M .

SURFACE SCIENCE, 1991, 243 (1-3) :132-140

[10] COMPARISON OF SI(111) SURFACES PREPARED USING AQUEOUS-SOLUTIONS OF NH4F VERSUS HF [J].

HIGASHI, GS ;

BECKER, RS ;

CHABAL, YJ ;

BECKER, AJ .

APPLIED PHYSICS LETTERS, 1991, 58 (15) :1656-1658