SCREENING EFFECTS IN N-TYPE SI INVERSION LAYERS

被引:30
作者
HIPOLITO, O [1 ]
CAMPOS, VB [1 ]
机构
[1] UNIV FED SAO CARLOS,DEPT FIS,SAO CARLOS 13560,SP,BRAZIL
来源
PHYSICAL REVIEW B | 1979年 / 19卷 / 06期
关键词
D O I
10.1103/PhysRevB.19.3083
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The screening of a charged impurity center localized inside the oxide and at the interface of a n-type Si(001) inversion layer is considered and its effects on the electron-binding energies have been calculated. The results reported here show that the screening of a point-charge impurity by electrons in a silicon inversion layer can account for the observed electron binding energies of Fowler and Hartstein. It is shown that the linear theory of screening underestimates the electron density around the impurity point charge. The Coulomb potential associated with the impurity located at the interface was obtained for several values of both the screening parameter and the external electric field. © 1979 The American Physical Society.
引用
收藏
页码:3083 / 3088
页数:6
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