SYMMETRY DETERMINATION OF SURFACE-STATES ON GAAS (110) USING POLARIZATION-DEPENDENT, ANGLE-RESOLVED PHOTOEMISSION

被引：63

作者：

WILLIAMS, GP

SMITH, RJ

LAPEYRE, GJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1249 / 1251

页数：3

共 13 条

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[4] EVIDENCE FOR SUBSURFACE ATOMIC DISPLACEMENTS OF GAAS(110) SURFACE FROM LEED/CMTA ANALYSIS
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[6] KNAPP J, COMMUNICATION
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[8] KNAPP JA, UNPUBLISHED
[9] ANGLE-RESOLVED SYNCHROTRON PHOTOEMISSION STUDIES OF CLEAN AND CHEMISORBED SURFACES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 384 - 390
[10] SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110)
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DUKE, CB
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[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (17) : 1058 - 1061