MODELING OF HYDROGEN DIFFUSION IN N-TYPE AND P-TYPE SILICON

[1] BORENSTEIN JT, 1988, IN PRESS CHARACERIZA, V138

[2] HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 918 - 920

[3] STATE AND MOTION OF HYDROGEN IN CRYSTALLINE SILICON [J]. PHYSICAL REVIEW B, 1988, 37 (12): : 6887 - 6892

[4] DEICHER M, 1989, MATER SCI FORUM, V3841, P1045

[5] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (07) : 769 - 772

[6] JOHNSON NM, 1987, PHYS REV B, V35, P4166, DOI 10.1103/PhysRevB.35.4166

[7] ABSENCE OF OXYGEN DIFFUSION DURING HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 787 - 789

[8] JOHNSON NM, 1989, MATERIALS SCI FORUM, V3841, P961

[9] Pantelides S. T., 1986, Materials Science Forum, V10-12, P573, DOI 10.4028/www.scientific.net/MSF.10-12.573

[10] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03): : 153 - 195

[1] BORENSTEIN JT, 1988, IN PRESS CHARACERIZA, V138

[2] HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 918 - 920

[3] STATE AND MOTION OF HYDROGEN IN CRYSTALLINE SILICON [J]. PHYSICAL REVIEW B, 1988, 37 (12): : 6887 - 6892

[4] DEICHER M, 1989, MATER SCI FORUM, V3841, P1045

[5] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (07) : 769 - 772

[6] JOHNSON NM, 1987, PHYS REV B, V35, P4166, DOI 10.1103/PhysRevB.35.4166

[7] ABSENCE OF OXYGEN DIFFUSION DURING HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 787 - 789

[8] JOHNSON NM, 1989, MATERIALS SCI FORUM, V3841, P961

[9] Pantelides S. T., 1986, Materials Science Forum, V10-12, P573, DOI 10.4028/www.scientific.net/MSF.10-12.573

[10] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03): : 153 - 195