ENERGY AND MOMENTUM LOSS RATES FOR HOT ELECTRONS IN SILICON

[1] FIELD DEPENDENCE OF IONISATION RATES OF ELECTRONS IN SILICON [J]. ELECTRONICS LETTERS, 1969, 5 (21) : 536 - +

[2] AHMAD S, THESIS BIRLA I TECHN

[3] AHMAD S, UNPUBLISHED

[4] CONWELL EM, 1964, PHYS REV, V135, P1138

[5] CONWELL EM, 1967, SOLID STATE PHYSIC S, V9, P105

[6] ELECTRON DRIFT VELOCITY IN AVALANCHING SILICON DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 46 - +

[1] FIELD DEPENDENCE OF IONISATION RATES OF ELECTRONS IN SILICON [J]. ELECTRONICS LETTERS, 1969, 5 (21) : 536 - +

[2] AHMAD S, THESIS BIRLA I TECHN

[3] AHMAD S, UNPUBLISHED

[4] CONWELL EM, 1964, PHYS REV, V135, P1138

[5] CONWELL EM, 1967, SOLID STATE PHYSIC S, V9, P105

[6] ELECTRON DRIFT VELOCITY IN AVALANCHING SILICON DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 46 - +