FIELD DEPENDENCE OF IONISATION RATES OF ELECTRONS IN SILICON

被引：2

作者：

AHMAD, S

KHOKLE, WS

机构：

[1] Birla Institute of Technology & Science Pilani, Rajasthan

[2] Central Electronics Engineering Research Institute Pilani, Rajasthan

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 21期

关键词：

D O I：

10.1049/el:19690402

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical model for the ionisation coefficient of electrons in silicon has been developed based on the solution of the Boltzmann transport equation. Analytic expressions are obtained for the ionisation coefficient and the drift velocity. Modifications in the deformation potential constants have been suggested for obtaining a fit to the experimentally observed results for the drift velocity and ionisation coefficient. The mean free path for ionisation calculated with the help of this model fits well with the earlier predictions. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：536 / +

页数：1

共 11 条

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