ELECTRIC-FIELDS AND VALENCE-BAND OFFSETS IN N + N [001] AND [110] ZNSE/GAAS, GAAS/GE, AND ZNSE/GE SUPERLATTICES

被引：28

作者：

EPPENGA, R

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.40.10402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：10402 / 10406

页数：5

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[1] BAND OFFSETS IN LATTICE-MATCHED HETEROJUNCTIONS - A MODEL AND 1ST-PRINCIPLES CALCULATIONS FOR GAAS/ALAS
BALDERESCHI, A
BARONI, S
RESTA, R
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (06) : 734 - 737
[2] COMPARISON OF DIPOLE LAYERS, BAND OFFSETS, AND FORMATION ENTHALPIES OF GAAS-ALAS (110) AND (001) INTERFACES
BYLANDER, DM
KLEINMAN, L
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (18) : 2091 - 2094
[3] DIPOLE EFFECTS AND BAND OFFSETS AT SEMICONDUCTOR INTERFACES
CHRISTENSEN, NE
[J]. PHYSICAL REVIEW B, 1988, 37 (09): : 4528 - 4538
[4] POLAR HETEROJUNCTION INTERFACES
HARRISON, WA
KRAUT, EA
WALDROP, JR
GRANT, RW
[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4402 - 4410
[5] INHOMOGENEOUS ELECTRON-GAS
RAJAGOPAL, AK
CALLAWAY, J
[J]. PHYSICAL REVIEW B, 1973, 7 (05) : 1912 - 1919
[6] SELF-CONSISTENT LMTO APPROACH TO THE ELECTRONIC-STRUCTURE OF SEMICONDUCTORS - GAAS
JARLBORG, T
FREEMAN, AJ
[J]. PHYSICS LETTERS A, 1979, 74 (05) : 349 - 353
[7] SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS
KOHN, W
SHAM, LJ
[J]. PHYSICAL REVIEW, 1965, 140 (4A): : 1133 - &
[8] THEORY OF SEMICONDUCTOR HETEROJUNCTION VALENCE-BAND OFFSETS - FROM SUPERCELL BAND-STRUCTURE CALCULATIONS TOWARD A SIMPLE-MODEL
LAMBRECHT, WRL
SEGALL, B
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (15) : 1764 - 1767
[9] ATOMIC RECONSTRUCTION AT POLAR INTERFACES OF SEMICONDUCTORS
MARTIN, RM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 978 - 981
[10] INTERFACE PHENOMENA AT SEMICONDUCTOR HETEROJUNCTIONS - LOCAL-DENSITY VALENCE-BAND OFFSET IN GAAS/ALAS
MASSIDDA, S
MIN, BI
FREEMAN, AJ
[J]. PHYSICAL REVIEW B, 1987, 35 (18): : 9871 - 9874