INTERFACE PHENOMENA AT SEMICONDUCTOR HETEROJUNCTIONS - LOCAL-DENSITY VALENCE-BAND OFFSET IN GAAS/ALAS

被引：87

作者：

MASSIDDA, S ^{[1
]}

MIN, BI ^{[1
]}

FREEMAN, AJ ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,DEPT PHYS & ASTRON,EVANSTON,IL 60201

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.35.9871

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：9871 / 9874

页数：4

相关论文

共 35 条

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[8] A CRITICAL-REVIEW OF HETEROJUNCTION BAND OFFSETS
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[9] The electronic band structure of (GaAs)(n)(AlAs)(n) superlattices
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[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (03) : 169 - 171
[10] DEFECTIVE HETEROJUNCTION MODELS
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