NEW APPROACH TO THE STRAIN RELAXATION MECHANISM IN LATTICE-MISMATCHED EPITAXY

被引：15

作者：

TATSUOKA, H

KUWABARA, H

NAKANISHI, Y

FUJIYASU, H

机构：

[1] SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SHIZUOKA 432,JAPAN

[2] SHIZUOKA UNIV,FAC ENGN,HAMAMATSU,SHIZUOKA 432,JAPAN

来源：

THIN SOLID FILMS | 1991年 / 201卷 / 01期

关键词：

D O I：

10.1016/0040-6090(91)90154-P

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new approach is presented for the calculation of the dependence of elastic strain on the thickness of CdTe(100) films on GaAs(100) substrates. The present results are obtained by assuming that the misfit dislocation density is in proportion to the strain. It is found that our model fits experimental results quite well. The model suggests that abrupt relaxation occurs at the interface between the film and substrate. The misfit dislocation density is calculated as a function of distance from the interface. Applications of our model to InAs/GaAs(100) and GaAs/Si(100) systems are also discussed.

引用

页码：59 / 67

页数：9

共 23 条

[21] STRUCTURE OF EPITAXIAL CRYSTAL INTERFACES [J].