THEORETICAL CONSIDERATIONS REGARDING PULSED CO2-LASER ANNEALING OF SILICON

被引：18

作者：

BHATTACHARYYA, A ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

关键词：

D O I：

10.1016/0038-1098(80)90206-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：671 / 675

页数：5

共 7 条

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[2] CELLER GK, 1979, AIP50 C P, P381
[3] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON
JACOBONI, C
CANALI, C
OTTAVIANI, G
QUARANTA, AA
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (02) : 77 - 89
[4] ANNEALING OF PHOSPHORUS-ION-IMPLANTED SILICON USING A CO2-LASER
MIYAO, M
OHYU, K
TOKUYAMA, T
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 227 - 229
[5] FREE CARRIER ABSORPTION IN SILICON
SCHRODER, DK
THOMAS, RN
SWARTZ, JC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) : 254 - 261
[6] SILICON OPTICAL CONSTANTS IN INFRARED
SCHUMANN, PA
KEENAN, WA
TONG, AH
GEGENWARTH, HH
SCHNEIDER, CP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 145 - +
[7] SEEGER K, 1973, SEMICONDUCTOR PHYSIC, P374