LASER-INDUCED PHOTODESORPTION OF SICL FROM SI(100) MONITORED BY TIME OF FLIGHT AND TIME RESOLVED REFLECTIVITY

被引：16

作者：

BOULMER, J ^{[1
]}

BOURGUIGNON, B ^{[1
]}

BUDIN, JP ^{[1
]}

DEBARRE, D ^{[1
]}

DESMUR, A ^{[1
]}

机构：

[1] UNIV PARIS 11,INST PHYSICOCHIM MOLEC,PHOTOPHYS MOLEC LAB,CNRS,F-91405 ORSAY,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 06期

关键词：

D O I：

10.1116/1.577152

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The excimer laser induced desorption rate of SiCl molecules from a chlorinated silicon surface is measured in real time together with the transient change of the surface reflectivity at 632.8 nm. It is demonstrated that, under conditions where gas-phase chlorine is not photoexcited and does not collide with the surface during the laser pulse, laser induced desorption occurs only when the surface melts, at the laser wavelengths 308 and 248 nm.

引用

页码：2923 / 2927

页数：5

共 31 条

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