TIME OF FLIGHT STUDY OF LOW-PRESSURE LASER ETCHING OF SILICON BY CHLORINE

被引：24

作者：

BOULMER, J

BOURGUIGNON, B

BUDIN, JP

DEBARRE, D

机构：

来源：

APPLIED SURFACE SCIENCE | 1989年 / 43卷

关键词：

D O I：

10.1016/0169-4332(89)90250-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：424 / 431

页数：8

共 20 条

[1] LASER-INDUCED ETCHING OF SI WITH CHLORINE [J].

BALLER, T ;

OOSTRA, DJ ;

DEVRIES, AE ;

VANVEEN, GNA .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2321-2326

[2]

BALLER TS, 1988, MRS S B BOSTON

[3]

BAUERLE D, 1986, CHEM PROCESSING LASE

[4]

BOUCHIER D, COMMUNICATION

[5]

BOYD IW, 1987, LASER PROCESSING THI

[6]

BUDIN JP, IN PRESS THIN SOLID

[7] A THERMAL DESCRIPTION OF THE MELTING OF C-SILICON AND A-SILICON UNDER PULSED EXCIMER LASERS [J].

DEUNAMUNO, S ;

FOGARASSY, E .

APPLIED SURFACE SCIENCE, 1989, 36 (1-4) :1-11

[8] INFLUENCE OF DUV EXCIMER LASER-RADIATION (LAMBDA=193 NM) ON CMOS DEVICES [J].

EDEN, K ;

BENEKING, H ;

ROTH, W .

APPLIED SURFACE SCIENCE, 1989, 36 (1-4) :421-431

[9] CHLORINE REACTIONS ON SI (111) SURFACE [J].

FLORIO, JV ;

ROBERTSO.WD .

SURFACE SCIENCE, 1969, 18 (02) :398-&

[10] PHOTOCHEMISTRY OF ADSORBED MOLECULES .3. PHOTODISSOCIATION AND PHOTODESORPTION OF CH3BR ADSORBED ON LIF(001) [J].

HARRISON, I ;

POLANYI, JC ;

YOUNG, PA .

JOURNAL OF CHEMICAL PHYSICS, 1988, 89 (03) :1475-1497

← 1 2 →