LASER-INDUCED ETCHING OF SI WITH CHLORINE

被引：41

作者：

BALLER, T ^{[1
]}

OOSTRA, DJ ^{[1
]}

DEVRIES, AE ^{[1
]}

VANVEEN, GNA ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.337142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2321 / 2326

页数：6

共 22 条

[1] EXCIMER LASER ETCHING OF POLYIMIDE [J].

BRANNON, JH ;

LANKARD, JR ;

BAISE, AI ;

BURNS, F ;

KAUFMAN, J .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) :2036-2043

[2] PHOTO-CVD FOR VLSI ISOLATION [J].

CHEN, JYT ;

HENDERSON, RC ;

HALL, JT ;

PETERS, JW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (09) :2146-2151

[3] MULTIPLE PHOTON EXCITED SF6 INTERACTION WITH SILICON SURFACES [J].

CHUANG, TJ .

JOURNAL OF CHEMICAL PHYSICS, 1981, 74 (02) :1453-1460

[4] INFRARED-LASER RADIATION EFFECTS ON XEF2 INTERACTION WITH SILICON [J].

CHUANG, TJ .

JOURNAL OF CHEMICAL PHYSICS, 1981, 74 (02) :1461-1466

[5] INFRARED-LASER INDUCED REACTIONS AT METAL AND SEMICONDUCTOR SURFACES [J].

CHUANG, TJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :638-642

[6]

CHUANG TJ, 1984, DYNAMICS SURFACES, P313

[7]

Comsa G., 1982, DYNAMICS GAS SURFACE, P117

[8] LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :698-700

[9] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1018-1020

[10] HIGH-RESOLUTION ULTRAVIOLET PHOTOABLATION OF SIOX FILMS [J].

FIORI, C ;

DEVINE, RAB .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :361-362

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