A THERMAL DESCRIPTION OF THE MELTING OF C-SILICON AND A-SILICON UNDER PULSED EXCIMER LASERS

被引:155
作者
DEUNAMUNO, S
FOGARASSY, E
机构
关键词
D O I
10.1016/0169-4332(89)90894-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:1 / 11
页数:11
相关论文
共 32 条
[1]  
Aziz M.J., 1985, PHYS, VIV, P231
[2]  
DEUTSCH TF, 1983, P MRS S, V17, P225
[3]   HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J].
DONOVAN, EP ;
SPAEPEN, F ;
TURNBULL, D ;
POATE, JM ;
JACOBSON, DC .
APPLIED PHYSICS LETTERS, 1983, 42 (08) :698-700
[4]  
FOGARASSY E, 1985, ENERGETIC BEAM SOLID, P153
[5]   MELTING THRESHOLD OF CRYSTALLINE AND AMORPHIZED SI IRRADIATED WITH A PULSED ARF (193 NM) EXCIMER LASER [J].
FOULON, F ;
FOGARASSY, E ;
SLAOUI, A ;
FUCHS, C ;
UNAMUNO, S ;
SIFFERT, P .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (04) :361-364
[6]  
FOULON F, COMMUNICATION
[7]   THERMAL-CONDUCTIVITY OF AMORPHOUS-SILICON [J].
GOLDSMID, HJ ;
KAILA, MM ;
PAUL, GL .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01) :K31-K33
[8]   FAR UV PULSED LASER MELTING OF SILICON [J].
GORODETSKY, G ;
KANICKI, J ;
KAZYAKA, T ;
MELCHER, RL .
APPLIED PHYSICS LETTERS, 1985, 46 (06) :547-549
[9]   OPTICAL FUNCTIONS OF SILICON BETWEEN 1.7 AND 4.7 EV AT ELEVATED-TEMPERATURES [J].
JELLISON, GE ;
MODINE, FA .
PHYSICAL REVIEW B, 1983, 27 (12) :7466-7472
[10]   TIME-RESOLVED REFLECTIVITY MEASUREMENTS ON SILICON AND GERMANIUM USING A PULSED EXCIMER KRF LASER-HEATING BEAM [J].
JELLISON, GE ;
LOWNDES, DH ;
MASHBURN, DN ;
WOOD, RF .
PHYSICAL REVIEW B, 1986, 34 (04) :2407-2415