CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY ON HETEROSTRUCTURES - ATOMIC-RESOLUTION, COMPOSITION FLUCTUATIONS AND DOPING

被引：23

作者：

SALEMINK, HWM

JOHNSON, MB

ALBREKTSEN, O

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 01期

关键词：

D O I：

10.1116/1.587126

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cross-sectional scanning tunneling microscopy on semiconductor structures is evolving into a technique to analyze structural, chemical, and electronic properties on the atomic and nanometer scale in all spatial dimensions, in particular, in the lateral and in-depth spatial dimensions of the structure. This technique has been used on the ultrahigh vacuum cleaved (110) plane of (001)-grown AlGaAs/GaAs heterostructures. Measurements of (i) interface roughness, alloy fluctuations, and ordering; (ii) the variation of electronic properties over an interface as well as fluctuations within the alloy; and (iii) the distribution of individual dopant sites are reported on.

引用

收藏

页码：362 / 368

页数：7

相关论文

共 14 条

[1] TUNNELING MICROSCOPY AND SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ALGAAS INTERFACES [J].

ALBREKTSEN, O ;

ARENT, DJ ;

MEIER, HP ;

SALEMINK, HWM .

APPLIED PHYSICS LETTERS, 1990, 57 (01) :31-33

[2] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].

BINNING, G ;

ROHRER, H ;

GERBER, C ;

WEIBEL, E .

PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61

[3] CROSS-SECTIONAL IMAGING AND SPECTROSCOPY OF GAAS DOPING SUPERLATTICES BY SCANNING TUNNELING MICROSCOPY [J].

FEENSTRA, RM ;

YU, ET ;

WOODALL, JM ;

KIRCHNER, PD ;

LIN, CL ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1992, 61 (07) :795-797

[4] SCANNING TUNNELING MICROSCOPE COMBINED WITH A SCANNING ELECTRON-MICROSCOPE [J].

GERBER, C ;

BINNIG, G ;

FUCHS, H ;

MARTI, O ;

ROHRER, H .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (02) :221-224

[5] SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE [J].

HAMERS, RJ ;

TROMP, RM ;

DEMUTH, JE .

PHYSICAL REVIEW LETTERS, 1986, 56 (18) :1972-1975

[6] OBSERVATION OF PN JUNCTIONS ON IMPLANTED SILICON USING A SCANNING TUNNELING MICROSCOPE [J].

HOSAKA, S ;

HOSOKI, S ;

TAKATA, K ;

HORIUCHI, K ;

NATSUAKI, N .

APPLIED PHYSICS LETTERS, 1988, 53 (06) :487-489

[7] DIRECT IMAGING OF DOPANTS IN GAAS WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY [J].

JOHNSON, MB ;

ALBREKTSEN, O ;

FEENSTRA, RM ;

SALEMINK, HWM .

APPLIED PHYSICS LETTERS, 1993, 63 (21) :2923-2925

[8] SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY FOR STUDYING CROSS-SECTIONED SI(100) [J].

JOHNSON, MB ;

HALBOUT, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (01) :508-514

[9]

JOHNSON MB, 1992, 7TH P INT WINT SCH, P108

[10] SCANNING TUNNELING SPECTROSCOPY ON CLEAVED SILICON PN-JUNCTIONS [J].

KORDIC, S ;

VANLOENEN, EJ ;

DIJKKAMP, D ;

HOEVEN, AJ ;

MORAAL, HK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01) :549-552