A THEORETICAL-STUDY OF THE CRITICAL RADIUS OF PRECIPITATES AND ITS APPLICATION TO SILICON-OXIDE IN SILICON

被引:141
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VANHELLEMONT, J
CLAEYS, C
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10.1063/1.339194
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O59 [应用物理学];
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页码:3960 / 3967
页数:8
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  • [1] ALBUYARON A, 1984, 8TH P EUR C EL MICR, P521
  • [2] INVESTIGATION OF THE OXYGEN-RELATED LATTICE-DEFECTS IN CZOCHRALSKI SILICON BY MEANS OF ELECTRON-MICROSCOPY TECHNIQUES
    BENDER, H
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (01): : 245 - 261
  • [3] BOURRET A, IN PRESS I PHYS C SE
  • [4] BOURRET A, 1986, MATER RES SOC S P, V59, P223
  • [5] HIGH-RESOLUTION STRUCTURE IMAGING AND IMAGE SIMULATION OF STACKING-FAULT TETRAHEDRA IN ION-IMPLANTED SILICON
    COENE, W
    BENDER, H
    AMELINCKX, S
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1985, 52 (03): : 369 - 381
  • [6] CRAVEN RA, 1981, SEMICONDUCTOR SILICO, P254
  • [7] DEVEIRMAN A, IN PRESS I PHYS C SE
  • [8] Gaworzewski P., 1985, 1st International Autumn School 1985: Gettering and Defect Engineering in the Semiconductor Technology (GADEST). Proceedings, P69
  • [9] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON
    GOSELE, U
    TAN, TY
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02): : 79 - 92
  • [10] HU SM, 1986, MATER RES SOC S P, V59, P249