OPEN TUBE ZN DIFFUSION USING IN/ZN SOURCES AND ITS APPLICATION IN QUASI-PLANAR INP/INGAASP HBTS

被引：6

作者：

LI, W

PAN, H

机构：

[1] Acad Sinica, Shanghai, China, Acad Sinica, Shanghai, China

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 09期

关键词：

SURFACE THERMAL EROSION - THERMAL SURFACE DAMAGE - WET ETCHING;

D O I：

10.1149/1.2100880

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2329 / 2332

页数：4

共 11 条

[1] SELECTIVE AREA LPE GROWTH AND OPEN TUBE DIFFUSION IN INGAAS/INP [J].

CHAND, N ;

HOUSTON, PA .

JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (01) :9-24

[2] DIFFUSION OF CD AND ZN IN INP BETWEEN 550 AND 650-DEGREES-C [J].

CHAND, N ;

HOUSTON, PA .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) :37-52

[3] INGAAS/INP HETEROBIPOLAR TRANSISTORS FOR INTEGRATION ON SEMI-INSULATING INP SUBSTRATES [J].

DAMBKES, H ;

KONIG, U ;

SCHWADERER, B .

ELECTRONICS LETTERS, 1984, 20 (23) :955-957

[4] OPEN AMPOULE DIFFUSION IN INP [J].

FAVENNEC, PN ;

HENRY, L ;

GAUNEAU, M ;

LHARIDON, H ;

PELOUS, G .

ELECTRONICS LETTERS, 1980, 16 (22) :832-833

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[6] AN OPEN TUBE METHOD OF ZN DIFFUSION IN III-V-COMPOUNDS [J].

PHATAK, SB .

ELECTRON DEVICE LETTERS, 1982, 3 (05) :132-134

[7] INP/INGAAS DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY MBE [J].

SCHUITEMAKER, P ;

CLAXTON, PA ;

ROBERTS, JS ;

PLANT, TK ;

HOUSTON, PA .

ELECTRONICS LETTERS, 1986, 22 (15) :781-783

[8] AN INGAASP/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR FOR MONOLITHIC INTEGRATION WITH A 1.5-MU-M LASER DIODE [J].

SU, LM ;

GROTE, N ;

KAUMANNS, R ;

KATZSCHNER, W ;

BACH, HG .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) :14-17

[9] PREPARATION AND PROPERTIES OF THE ANODIC AL2O3 FILM ON INP AND IN0.53GA0.47AS [J].

SUSA, N ;

SCHMITT, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) :2220-2225

[10] DIFFUSION PROFILES OF ZINC IN INDIUM-PHOSPHIDE [J].

TUCK, B ;

HOOPER, A .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (15) :1806-1821

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