THE EFFECT OF PH3 PYROLYSIS ON THE MORPHOLOGY AND GROWTH-RATE OF INP GROWN BY HYDRIDE VAPOR-PHASE EPITAXY

被引：20

作者：

KARLICEK, RF

MITCHAM, D

GINOCCHIO, JC

HAMMARLUND, B

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 02期

关键词：

D O I：

10.1149/1.2100482

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：470 / 474

页数：5

共 20 条

[1]

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[3] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J].

DILORENZO, JV .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :189-+

[4] DEVELOPMENT OF LASER DIAGNOSTIC PROBES FOR CHEMICAL VAPOR-DEPOSITION OF INP/INGAASP EPITAXIAL LAYERS [J].

DONNELLY, VM ;

KARLICEK, RF .

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[5] THE EFFECT OF A CONTINUOUS ETCH ON THE GROWTH-RATE AND MORPHOLOGY OF INP PREPARED BY THE VAPOR-PHASE EPITAXIAL-HYDRIDE METHOD [J].

ERSTFELD, TE ;

QUINLAN, KP .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :647-662

[6]

GOODRIDGE IH, 1984, I PHYSICS C SERIES, V74, P205

[7] The unimolecular decomposition of phosphine [J].

Hinshelwood, CN ;

Topley, B .

JOURNAL OF THE CHEMICAL SOCIETY, 1924, 125 :393-406

[8] GROWTH PYRAMIDS IN EPITAXIAL GAAS [J].

JOYCE, BD ;

MULLIN, JB .

SOLID STATE COMMUNICATIONS, 1966, 4 (09) :463-&

[9] UV ABSORPTION-SPECTROSCOPY FOR MONITORING HYDRIDE VAPOR-PHASE EPITAXY OF INGAASP ALLOYS [J].

KARLICEK, RF ;

HAMMARLUND, B ;

GINOCCHIO, J .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :794-799

[10]

MACKAY KM, 1966, HYDROGEN COMPOUNDS M, P80

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