HIGH-RADIANCE LIGHT-EMITTING DIODES

被引：19

作者：

ETTENBERG, M ^{[1
]}

HUDSON, KC ^{[1
]}

LOCKWOOD, HF ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

关键词：

D O I：

10.1109/JQE.1973.1077401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：987 / 991

页数：5

共 8 条

[1] ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1103
[2] ALFEROV ZI, 1969, PHYS TECH SEMICOND, V3, P1328
[3] RADIANCE OF SMALL-AREA HIGH-CURRENT-DENSITY ELECTROLUMINESCENT DIODES
BURRUS, CA
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02): : 231 - &
[4] CONTINUOUS OPERATION OF GAAS JUNCTION LASERS ON DIAMOND HEAT SINKS AT 200 DEGREES K
DYMENT, JC
DASARO, LA
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (09) : 292 - &
[5] A LOW-THRESHOLD ROOM-TEMPERATURE INJECTION LASER
HAYASHI, I
PANISH, MB
FOY, PW
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1969, QE 5 (04) : 211 - &
[6] KRESSEL H, 1969, RCA REV, V30, P106
[7] LOW-THRESHOLD ALX GA1-X AS VISIBLE AND IR-LIGHT-EMITTING DIODE LASERS
KRESSEL, H
LOCKWOOD, HF
NELSON, H
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1970, QE 6 (06) : 278 - &
[8] ZARGARYANTS MN, 1971, SOV PHYS SEMICOND+, V4, P1371