TEMPERATURE-FLUCTUATION IN MOLTEN GAAS

[1] Glazov V. M., 1969, LIQUID SEMICONDUCTOR

[2] GLAZOV VM, 1977, INORG MATER+, V13, P26

[3] STUDY OF THERMAL SYMMETRY IN CZOCHRALSKI SILICON MELT UNDER A VERTICAL MAGNETIC-FIELD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L527 - L530

[4] IMPROVEMENT OF THERMAL SYMMETRY IN CZ SILICON MELTS BY THE APPLICATION OF A VERTICAL MAGNETIC-FIELD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 330 - 334

[5] ESTIMATED THERMAL-DIFFUSIVITY, PRANDTL NUMBER AND GRASHOF NUMBER OF MOLTEN GAAS, INP, AND GASB [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (03) : 551 - 558

[6] SUPPRESSION OF THERMAL-CONVECTION BY TRANSVERSE MAGNETIC-FIELD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 427 - 429

[7] ELIMINATION OF RANDOM COMPOSITIONAL INHOMOGENEITIES IN CZOCHRALSKI GROWN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) : 1276 - 1277

[8] HOMOGENEITY OF VERTICAL MAGNETIC-FIELD APPLIED LEC GAAS CRYSTAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (04): : L195 - L197

[9] SIMULATION STUDIES OF THE HYDRODYNAMICS IN HIGH-TEMPERATURE SOLUTIONS FOR CRYSTAL-GROWTH BY THE TSSG METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) : 173 - 186

[10] A NEW MAGNETIC-FIELD APPLIED PULLING APPARATUS FOR LEC GAAS SINGLE-CRYSTAL GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (02) : 423 - 425

[1] Glazov V. M., 1969, LIQUID SEMICONDUCTOR

[2] GLAZOV VM, 1977, INORG MATER+, V13, P26

[3] STUDY OF THERMAL SYMMETRY IN CZOCHRALSKI SILICON MELT UNDER A VERTICAL MAGNETIC-FIELD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L527 - L530

[4] IMPROVEMENT OF THERMAL SYMMETRY IN CZ SILICON MELTS BY THE APPLICATION OF A VERTICAL MAGNETIC-FIELD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 330 - 334

[5] ESTIMATED THERMAL-DIFFUSIVITY, PRANDTL NUMBER AND GRASHOF NUMBER OF MOLTEN GAAS, INP, AND GASB [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (03) : 551 - 558

[6] SUPPRESSION OF THERMAL-CONVECTION BY TRANSVERSE MAGNETIC-FIELD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 427 - 429

[7] ELIMINATION OF RANDOM COMPOSITIONAL INHOMOGENEITIES IN CZOCHRALSKI GROWN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) : 1276 - 1277

[8] HOMOGENEITY OF VERTICAL MAGNETIC-FIELD APPLIED LEC GAAS CRYSTAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (04): : L195 - L197

[9] SIMULATION STUDIES OF THE HYDRODYNAMICS IN HIGH-TEMPERATURE SOLUTIONS FOR CRYSTAL-GROWTH BY THE TSSG METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) : 173 - 186

[10] A NEW MAGNETIC-FIELD APPLIED PULLING APPARATUS FOR LEC GAAS SINGLE-CRYSTAL GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (02) : 423 - 425