COULOMBIC AND NEUTRAL ELECTRON TRAPPING CENTERS IN SIO2

被引：8

作者：

BUCHANAN, DA ^{[1
]}

FISCHETTI, MV ^{[1
]}

DIMARIA, DJ ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90459-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：420 / 428

页数：9

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