TEMPERATURE DEPENDENCE OF IMPURITY ABSORPTION LINES IN SI (INDIUM)

被引:1
作者
BHATIA, KL
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D O I
10.1016/0375-9601(71)90973-X
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:14 / &
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[5]   ABSORPTION-LINE BROADENING IN BORON-DOPED SILICON [J].
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