ONE-DIMENSIONAL HOPPING CONDUCTIVITY CALCULATIONS

被引:14
作者
HUNT, A
机构
[1] Earth Sciences Department, University of California, Riverside
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1991年 / 64卷 / 03期
关键词
D O I
10.1080/13642819108207623
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A simple procedure for calculating the expected maximum resistance value in a length L of a one-dimensional random chain is used to calculate the d.c. conductivity of systems of length L, and forms the basis of calculations of the low-frequency a.c. conductivity. The high-frequency a.c. conductivity is given in a pair approximation. A smooth transition of the low-frequency calculations is obtained. Both spatially random and variable-range hopping (VRH) systems are treated.
引用
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页码:327 / 334
页数:8
相关论文
共 8 条
[1]  
BERNASCONI S, 1980, Z PHYSIK B, V37, P175
[2]  
Boettger H., 1985, HOPPING CONDUCTION S
[3]   HOPPING CONDUCTIVITY IN ONE DIMENSION [J].
KURKIJARVI, J .
PHYSICAL REVIEW B, 1973, 8 (02) :922-924
[4]   IMPURITY CONDUCTION AT LOW CONCENTRATIONS [J].
MILLER, A ;
ABRAHAMS, E .
PHYSICAL REVIEW, 1960, 120 (03) :745-755
[5]   CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS [J].
MOTT, NF .
PHILOSOPHICAL MAGAZINE, 1969, 19 (160) :835-&
[6]  
POLLAK M, 1974, AMORPHOUS LIQUID SEM, P127
[7]   NEW ASPECTS OF VARIABLE-RANGE HOPPING IN FINITE ONE-DIMENSIONAL WIRES [J].
SEROTA, RA ;
KALIA, RK ;
LEE, PA .
PHYSICAL REVIEW B, 1986, 33 (12) :8441-8446
[8]   ORIGIN OF THE PEAKED STRUCTURE IN THE CONDUCTANCE OF ONE-DIMENSIONAL SILICON ACCUMULATION LAYERS [J].
WEBB, RA ;
HARTSTEIN, A ;
WAINER, JJ ;
FOWLER, AB .
PHYSICAL REVIEW LETTERS, 1985, 54 (14) :1577-1580