ORIGIN OF THE PEAKED STRUCTURE IN THE CONDUCTANCE OF ONE-DIMENSIONAL SILICON ACCUMULATION LAYERS

被引：65

作者：

WEBB, RA

HARTSTEIN, A

WAINER, JJ

FOWLER, AB

机构：

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 54卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.54.1577

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1577 / 1580

页数：4

共 13 条

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[10]

LEE PA, COMMUNICATION

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