LOCALIZED VIBRATIONAL MODES OF LI DEFECT COMPLEXES IN GAAS

被引：22

作者：

LEVY, ME

SPITZER, WG

机构：

[1] UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90007

[2] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 22期

关键词：

D O I：

10.1088/0022-3719/6/22/009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3223 / 3244

页数：22

共 25 条

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[2] DEFECTS IN GAAS PRODUCED BY LITHIUM [J].

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WOLFSTIRN, KB .

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[3] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF LI IN GAAS SINGLE CRYSTALS [J].

FULLER, CS ;

WOLFSTIRN, KB .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) :2507-&

[4] ACCEPTORS IN DONOR-DOPED GAAS RESULTING FROM LI DIFFUSION [J].

FULLER, CS ;

WOLFSTIRN, KB .

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[5] ELECTRICAL PROPERTIES OF LI IN GAAS [J].

FULLER, CS ;

WOLFSTIRN, KB .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (02) :745-&

[6]

FULLER CS, 1962, P INT C PHYS SEMICON, P745

[7]

FULLER CS, 1964, 7 INT C PHYS SEM REP, V3, P187

[8]

FULLER CS, 1959, SEMICONDUCTORS

[9]

HASS M, 1967, SEMICONDUCTORS SEMIM, V3

[10]

HAYES W, 1965, PHYS REV, V138, P1227

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