VISIBLE LIGHT FROM A GERMANIUM REVERSE BIASED PARA-N JUNCTION

被引:7
作者
NELSON, JT
IRVIN, JC
机构
关键词
D O I
10.1063/1.1735074
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1847 / 1847
页数:1
相关论文
共 6 条
[1]   EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J].
CHYNOWETH, AG ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1103-1110
[2]  
CHYNOWETH AG, 1956, PHYS REV, V102, P569
[3]   AVALANCHE BREAKDOWN IN GERMANIUM [J].
MILLER, SL .
PHYSICAL REVIEW, 1955, 99 (04) :1234-1241
[4]   VISIBLE LIGHT FROM A SILICON P-N JUNCTION [J].
NEWMAN, R .
PHYSICAL REVIEW, 1955, 100 (02) :700-703
[5]  
NEWMAN R, 1955, PHYS REV, V98, P1536
[6]   ELECTRON IMPACT IONIZATION IN SEMICONDUCTORS [J].
TAUC, J .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :219-223