SOLID-PHASE EPITAXY OF LASER AMORPHIZED SILICON

被引：7

作者：

CUSTER, JS ^{[1
]}

THOMPSON, MO ^{[1
]}

BUCKSBAUM, PH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 15期

关键词：

D O I：

10.1063/1.99990

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1402 / 1404

页数：3

共 16 条

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PHYSICAL REVIEW B, 1984, 29 (02) :768-779

[2] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

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SIGMON, TW .

PHYSICS LETTERS A, 1975, 54 (02) :157-158

[4] TRANSITIONS TO DEFECTIVE CRYSTAL AND THE AMORPHOUS STATE INDUCED IN ELEMENTAL SI BY LASER QUENCHING [J].

CULLIS, AG ;

WEBBER, HC ;

CHEW, NG ;

POATE, JM ;

BAERI, P .

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[5]

JELLISON GE, 1982, ORNL8002 TECHN MEM

[6]

JELLISON GE, COMMUNICATION

[7] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

KENNEDY, EF ;

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4241-4246

[8] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J].

LIU, PL ;

YEN, R ;

BLOEMBERGEN, N ;

HODGSON, RT .

APPLIED PHYSICS LETTERS, 1979, 34 (12) :864-866

[9] VIBRATIONAL-SPECTRUM AND ORDER OF LASER-QUENCHED AMORPHOUS-SILICON [J].

MALEY, N ;

LANNIN, JS ;

CULLIS, AG .

PHYSICAL REVIEW LETTERS, 1984, 53 (16) :1571-1573

[10]

OLSON GL, 1983, MATER RES SOC S P, V13, P141

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