EXACT DETERMINATION OF SUPERLATTICE STRUCTURES BY SMALL-ANGLE X-RAY-DIFFRACTION METHOD

被引:41
作者
SUGAWARA, M
KONDO, M
YAMAZAKI, S
NAKAJIMA, K
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D O I
10.1063/1.99342
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O59 [应用物理学];
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页码:742 / 744
页数:3
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共 11 条
[1]   SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHANG, LL ;
SEGMULLER, A ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1976, 28 (01) :39-41
[2]   X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS [J].
FLEMING, RM ;
MCWHAN, DB ;
GOSSARD, AC ;
WIEGMANN, W ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :357-363
[3]  
James R.W., 1950, The Optical Principles of the Diffraction of X-rays
[4]   SURFACE STUDIES OF SOLIDS BY TOTAL REFLECTION OF X-RAYS [J].
PARRATT, LG .
PHYSICAL REVIEW, 1954, 95 (02) :359-369
[5]   X-RAY DIFFRACTION FROM ONE-DIMENSIONAL SUPERLATTICES IN GAAS1-XPX CRYSTALS [J].
SEGMULLER, A ;
BLAKESLEE, AE .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1973, 6 (FEB1) :19-25
[6]   X-RAY-DIFFRACTION STUDY OF A ONE-DIMENSIONAL GAAS-ALAS SUPERLATTICE [J].
SEGMULLER, A ;
KRISHNA, P ;
ESAKI, L .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1977, 10 (FEB1) :1-6
[7]   OPTICAL AND STRUCTURAL-PROPERTIES OF MOLECULAR-BEAM EPITAXIALLY GROWN GA0.47IN0.53AS/AL0.48IN0.52AS SUPERLATTICES, EMITTING AT 1.55 MU-M AT ROOM-TEMPERATURE [J].
STOLZ, W ;
TAPFER, L ;
BREITSCHWERDT, A ;
PLOOG, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (02) :97-102
[8]   X-RAY STUDIES OF SEMICONDUCTOR SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].
TERAUCHI, H ;
SEKIMOTO, S ;
KAMIGAKI, K ;
SAKASHITA, H ;
SANO, N ;
KATO, H ;
NAKAYAMA, M .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1985, 54 (12) :4576-4585
[9]   HIGH-RESOLUTION X-RAY-DIFFRACTION AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF INGAAS/INP SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].
VANDENBERG, JM ;
CHU, SNG ;
HAMM, RA ;
PANISH, MB ;
TEMKIN, H .
APPLIED PHYSICS LETTERS, 1986, 49 (19) :1302-1304
[10]   STRUCTURAL CHARACTERIZATION OF GALNAS(P)/INP QUANTUM-WELL STRUCTURES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].
VANDENBERG, JM ;
HAMM, RA ;
MACRANDER, AT ;
PANISH, MB ;
TEMKIN, H .
APPLIED PHYSICS LETTERS, 1986, 48 (17) :1153-1155