FORMATION OF AN INTERFACIAL AIN LAYER IN AN AL SI3N4 THIN-FILM SYSTEM

被引：18

作者：

BRENER, R ^{[1
]}

EDELMAN, F ^{[1
]}

GUTMANAS, EY ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT MAT ENGN,IL-32000 HAIFA,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 10期

关键词：

D O I：

10.1063/1.101418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：901 / 903

页数：3

共 22 条

[1] THIN-FILM REACTION BETWEEN TI AND SI3N4 [J].

BARBOUR, JC ;

KUIPER, AET ;

WILLEMSEN, MFC ;

READER, AH .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :953-955

[2] AUGER-ELECTRON SPECTROSCOPY STUDIES OF SILICON-NITRIDE, OXIDE, AND OXYNITRIDE THIN-FILMS - MINIMIZATION OF SURFACE DAMAGE BY ARGON AND ELECTRON-BEAMS [J].

CHAO, SS ;

TYLER, JE ;

TSU, DV ;

LUCOVSKY, G ;

MANTINI, MJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1283-1287

[3] SIMULATION OF FRACTAL-LIKE STRUCTURES IN BILAYER PD-SI ALLOY-FILMS [J].

DUAN, JZ ;

LI, Y ;

WU, ZQ .

SOLID STATE COMMUNICATIONS, 1988, 65 (01) :7-10

[4]

EDELMAN F, 1988, APPL PHYS LETT, V55, P1186

[5]

EDELMAN F, UNPUB

[6]

EDELMAN FL, 1985, STRUCTUR FESTKORPERN, P122

[7]

EDELMAN FL, 1979, PHYS STATUS SOLIDI, V51, P275

[8] INTERFACIAL NUCLEATION OF COMPOUNDS FOR THIN-FILM CO-HG1-XCDXTE CONTACTS [J].

EHSANI, H ;

BENE, RW .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) :1478-1485

[9] RARE-EARTH-METAL SEMICONDUCTOR INTERFACIAL REACTIONS - THERMODYNAMIC ASPECTS [J].

FUJIMORI, A ;

GRIONI, M ;

WEAVER, JH .

PHYSICAL REVIEW B, 1986, 33 (02) :726-735

[10] SOLID-PHASE CRYSTALLIZATION OF SI FILMS IN CONTACT WITH AI LAYERS [J].

HARRIS, JM ;

BLATTNER, RJ ;

WARD, ID ;

EVANS, CA ;

FRASER, HL ;

NICOLET, MA ;

RAMILLER, CL .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) :2897-2904

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