THE CRYSTALLINE-TO-AMORPHOUS TRANSITION IN ION-BOMBARDED SILICON

[1] Baranova E. C., 1973, Radiation Effects, V18, P21, DOI 10.1080/00337577308234712

[2] NEW MODEL TO EXPLAIN COLORS GENERATED ON SURFACE OF ION-IMPLANTED SILICON WAFERS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (04): : 219 - 220

[3] Bourgoin J. C., 1974, Radiation Effects, V22, P205, DOI 10.1080/10420157408230781

[4] RECOIL CONTRIBUTION TO ION-IMPLANTATION ENERGY-DEPOSITION DISTRIBUTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3385 - 3394

[5] ELECTRON-PARAMAGNETIC RESONANCE OF LATTICE DAMAGE IN OXYGEN-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3499 - &

[6] Chadderton L. T., 1971, Radiation Effects, V8, P77, DOI 10.1080/00337577108231012

[7] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &

[8] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[9] AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04): : 219 - 225

[10] ELECTRICAL PROPERTIES AND ANISOTROPY IN AMORPHOUS SI AND SI0.5 GE0.5 ALLOY [J]. PHYSICAL REVIEW B, 1973, 8 (08): : 3817 - 3823

[1] Baranova E. C., 1973, Radiation Effects, V18, P21, DOI 10.1080/00337577308234712

[2] NEW MODEL TO EXPLAIN COLORS GENERATED ON SURFACE OF ION-IMPLANTED SILICON WAFERS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (04): : 219 - 220

[3] Bourgoin J. C., 1974, Radiation Effects, V22, P205, DOI 10.1080/10420157408230781

[4] RECOIL CONTRIBUTION TO ION-IMPLANTATION ENERGY-DEPOSITION DISTRIBUTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3385 - 3394

[5] ELECTRON-PARAMAGNETIC RESONANCE OF LATTICE DAMAGE IN OXYGEN-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3499 - &

[6] Chadderton L. T., 1971, Radiation Effects, V8, P77, DOI 10.1080/00337577108231012

[7] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &

[8] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[9] AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04): : 219 - 225

[10] ELECTRICAL PROPERTIES AND ANISOTROPY IN AMORPHOUS SI AND SI0.5 GE0.5 ALLOY [J]. PHYSICAL REVIEW B, 1973, 8 (08): : 3817 - 3823