DEFECTS CREATED BY HYDROGEN IMPLANTATION INTO SILICON

被引：13

作者：

HARTUNG, J

WEBER, J

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90214-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：47 / 50

页数：4

共 19 条

[1]

BORTNIK MV, 1967, FIZ TEKH POLUPROV, V1, P353

[2]

CHEVALLIER J, 1988, ANNU REV MATER SCI, V18, P219

[3] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[4]

IRMSCHER K, 1984, J PHYS C SOLID STATE, V17, P637

[5] HIGH-RESOLUTION STUDIES OF SULFUR-RELATED AND SELENIUM-RELATED DONOR CENTERS IN SILICON [J].

JANZEN, E ;

STEDMAN, R ;

GROSSMANN, G ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1984, 29 (04) :1907-1918

[6] Recombination luminescence in irradiated silicon. Effects of thermal annealing and lithium impurity [J].

JOHNSON ES ;

COMPTON WD .

Radiation Effects, 1971, 9 (1-2) :89-92

[7]

Jones C. E., 1971, Radiation Effects, V9, P83, DOI 10.1080/00337577108242037

[8] RECOMBINATION LUMINESCENCE FROM ION-IMPLANTED SILICON [J].

KIRKPATRICK, CG ;

NOONAN, JR ;

STREETMAN, BG .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (02) :97-106

[9]

KOHN W, 1957, SOLID STATE PHYS, V5, P258

[10] STUDY OF DEFECTS IN SILICON AFTER LOW-ENERGY H+ IMPLANTATION BY DLTS MEASUREMENTS [J].

KRYNICKI, J ;

MULLER, JC ;

SIFFERT, P ;

BRYLOWSKA, I ;

PAPROCKI, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 100 (01) :245-249

← 1 2 →