RECOMBINATION LUMINESCENCE FROM ION-IMPLANTED SILICON

[1] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) : 739 - &

[2] BORTNIK MV, 1967, SOV PHYS SEMICOND+, V1, P290

[3] Brower K. L., 1971, Radiation Effects, V8, P213, DOI 10.1080/00337577108231031

[4] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 208 - &

[5] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2607 - 2617

[6] BROWER KL, TO BE PUBLISHED

[7] BROWER KL, 1971, RAD EFFECTS SEMICOND, P189

[8] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN P-TYPE SILICON - BORON INTERSTITIAL AND ALUMINUM INTERSTITIAL DEFECTS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 647 - &

[9] CORBETT JW, 1966, ELECTRON RADIATION D

[10] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (08) : 313 - +

[1] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) : 739 - &

[2] BORTNIK MV, 1967, SOV PHYS SEMICOND+, V1, P290

[3] Brower K. L., 1971, Radiation Effects, V8, P213, DOI 10.1080/00337577108231031

[4] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 208 - &

[5] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2607 - 2617

[6] BROWER KL, TO BE PUBLISHED

[7] BROWER KL, 1971, RAD EFFECTS SEMICOND, P189

[8] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN P-TYPE SILICON - BORON INTERSTITIAL AND ALUMINUM INTERSTITIAL DEFECTS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 647 - &

[9] CORBETT JW, 1966, ELECTRON RADIATION D

[10] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (08) : 313 - +