CONTINUOUS WAVE LASER-INDUCED CHEMICAL-REACTIONS WITH INTEGRATED-CIRCUITS

被引:3
作者
AUVERT, G
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 01期
关键词
D O I
10.1116/1.586342
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Interaction of a focused continuous wave laser beam with integrated circuits leads to various chemical reactions according to the nature of the irradiated interface and to the surrounding atmosphere. Silicon, tungsten, and nickel were locally deposited using silane, tungsten fluoride, or nickel carbonyl, respectively. The kinetics of these chemical reactions have been investigated and compared to the results of an appropriate kinetic model for surface reactions. Various chemical reactions for surface etching have also been investigated, such as etching of aluminum or silicon dioxide which occur at high temperature. Cutting interconnections, etching insulator layers, or depositing new chemical connections are the main applications of the laser-gas-surface chemical interaction, which is being more and more widely used for micron size features.
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页码:248 / 255
页数:8
相关论文
共 32 条
[1]   LASER CHEMICAL VAPOR-DEPOSITION - A TECHNIQUE FOR SELECTIVE AREA DEPOSITION [J].
ALLEN, SD .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6501-6505
[2]  
AUVERT G, 1989, NATO ADV SCI I B-PHY, V207, P227
[3]   EVIDENCE OF A PHOTON EFFECT DURING THE VISIBLE LASER-ASSISTED DEPOSITION OF POLYCRYSTALLINE SILICON FROM SILANE [J].
AUVERT, G ;
TONNEAU, D ;
PAULEAU, Y .
APPLIED PHYSICS LETTERS, 1988, 52 (13) :1062-1064
[4]   INFLUENCE OF CW LASER SCAN SPEED IN SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI FILM ON SI3N4-GLASS SUBSTRATE [J].
AUVERT, G ;
BENSAHEL, D ;
GEORGES, A ;
NGUYEN, VT ;
HENOC, P ;
MORIN, F ;
COISSARD, P .
APPLIED PHYSICS LETTERS, 1981, 38 (08) :613-615
[5]  
AUVERT G, 1986, VIDE COUCHES M N 233, P135
[6]  
AUVERT G, 1987, MATER RES SOC S P, V101, P125
[7]  
AUVERT G, 1986, 8618079 PATT
[8]  
AUVERT G, 1988, 8815435 PATT
[9]  
AUVERT G, 1988, LASER PROCESSES MICR, V8810, P193
[10]  
AUVERT G, 1986, LASER PROCESSING DIA, V2, P109