THE INFLUENCE OF THE L-CONDUCTION BAND ON THE INTERNAL QUANTUM EFFICIENCY OF INSB

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &

[2] IMPACT IONIZATION AND QUANTUM EFFICIENCY IN INSB [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 111 (01): : 141 - 153

[3] QUANTUM EFFICIENCY IN INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) : 1049 - &

[4] DEVREESE JT, UNPUB APPL PHYS

[5] IVAKHNO VN, 1965, FIZ TVERD TELA+, V6, P1651

[6] IMPACT IONIZATION THRESHOLDS AS GENERALIZATIONS OF VAN HOVE SINGULARITIES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (14): : 2717 - 2739

[7] ELECTRON IMPACT IONIZATION IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 219 - 223

[8] VANWELZENIS RG, 1981, APPL PHYS A-MATER, V26, P157, DOI 10.1007/BF00614750

[9] VOLKOV AS, 1973, SOV PHYS SEMICOND+, V7, P64

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &

[2] IMPACT IONIZATION AND QUANTUM EFFICIENCY IN INSB [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 111 (01): : 141 - 153

[3] QUANTUM EFFICIENCY IN INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) : 1049 - &

[4] DEVREESE JT, UNPUB APPL PHYS

[5] IVAKHNO VN, 1965, FIZ TVERD TELA+, V6, P1651

[6] IMPACT IONIZATION THRESHOLDS AS GENERALIZATIONS OF VAN HOVE SINGULARITIES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (14): : 2717 - 2739

[7] ELECTRON IMPACT IONIZATION IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 219 - 223

[8] VANWELZENIS RG, 1981, APPL PHYS A-MATER, V26, P157, DOI 10.1007/BF00614750

[9] VOLKOV AS, 1973, SOV PHYS SEMICOND+, V7, P64