DAMAGE PRODUCTION AT THE SURFACE OF SI SINGLE-CRYSTALS BY 200 KEV HE+ BOMBARDMENT

被引：8

作者：

WIGGERS, LW ^{[1
]}

KOEKKOEK, HG ^{[1
]}

BUTH, AH ^{[1
]}

SARIS, FW ^{[1
]}

ROOSENDAAL, HE ^{[1
]}

机构：

[1] UNIV BIELEFELD,BIELEFELD,FED REP GER

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1979年 / 42卷 / 1-2期

关键词：

D O I：

10.1080/10420157908201739

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Damage build-up at the surface of silicon single crystals irradiated by 200 kev He** plus was studied using the channeling technique. To investigate the role of diffusion of defects to the surface, traps were created in the bulk by doping samples with impurities (As and B) known to form complexes with point defects or by creating a buried damaged layer by N** plus implantation. In all cases the initial damage introduction rate at the surface was equal to that for undoped samples. Therefore it is concluded that for surface atom displacement the role of diffusion of defects to the surface is insignificant.

引用

页码：77 / 81

页数：5

共 15 条

[11]

KOOL WH, 1976, NUCL INSTRUM METHODS, V132, P285, DOI 10.1016/0029-554X(76)90747-3

[12]

ROOSENDAAL HE, UNPUBLISHED

[13] BACKSCATTERING MEASUREMENTS OF TEMPERATURE-DEPENDENCE OF IRRADIATION-INDUCED DISPLACEMENT OF AS AND SB ATOMS IN SI CRYSTALS [J].

SWANSON, ML ;

DAVIES, JA ;

QUENNEVILLE, AF ;

SARIS, FW ;

WIGGERS, LW .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 35 (1-2) :51-59

[14]

WEG WFV, 1973, RADIAT EFF DEFECT S, V17, P245

[15] DISPLACEMENT OF IMPURITIES IN SI BY IRRADIATION WITH ENERGETIC H+-PARTICLE OR HE+-PARTICLE [J].

WIGGERS, LW ;

SARIS, FW .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 41 (03) :149-164

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