OHMIC MOBILITY OF HOLES IN SILICON

[11] DIELECTRIC BREAKDOWN IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01): : 21 - 32

[12] ELECTRONIC EFFECTS IN ELASTIC CONSTANTS OF N-TYPE SILICON [J]. PHYSICAL REVIEW, 1967, 161 (03): : 756 - &

[13] SCATTERING OF ELECTRONS BY LATTICE VIBRATIONS IN NONPOLAR CRYSTALS [J]. PHYSICAL REVIEW, 1956, 104 (05): : 1281 - 1290

[14] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99

[15] CRYSTAL POTENTIAL AND ENERGY BANDS OF SEMICONDUCTORS .3. SELF-CONSISTENT CALCULATIONS FOR SILICON [J]. PHYSICAL REVIEW, 1960, 118 (05): : 1153 - 1167

[16] LOW-FIELD MOBILITY AND GALVANOMAGNETIC PROPERTIES OF HOLES IN GERMANIUM WITH PHONON SCATTERING [J]. PHYSICAL REVIEW, 1968, 174 (03): : 867 - &

[17] LONG-WAVELENGTH PHONON SCATTERING IN NONPOLAR SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1969, 183 (03): : 730 - &

[18] LAX B, 1955, PHYS REV, V101, P1650

[19] IMPURITY EFFECTS UPON MOBILITY IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (01) : 122 - 124

[20] DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1699 - 1701

[11] DIELECTRIC BREAKDOWN IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01): : 21 - 32

[12] ELECTRONIC EFFECTS IN ELASTIC CONSTANTS OF N-TYPE SILICON [J]. PHYSICAL REVIEW, 1967, 161 (03): : 756 - &

[13] SCATTERING OF ELECTRONS BY LATTICE VIBRATIONS IN NONPOLAR CRYSTALS [J]. PHYSICAL REVIEW, 1956, 104 (05): : 1281 - 1290

[14] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99

[15] CRYSTAL POTENTIAL AND ENERGY BANDS OF SEMICONDUCTORS .3. SELF-CONSISTENT CALCULATIONS FOR SILICON [J]. PHYSICAL REVIEW, 1960, 118 (05): : 1153 - 1167

[16] LOW-FIELD MOBILITY AND GALVANOMAGNETIC PROPERTIES OF HOLES IN GERMANIUM WITH PHONON SCATTERING [J]. PHYSICAL REVIEW, 1968, 174 (03): : 867 - &

[17] LONG-WAVELENGTH PHONON SCATTERING IN NONPOLAR SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1969, 183 (03): : 730 - &

[18] LAX B, 1955, PHYS REV, V101, P1650

[19] IMPURITY EFFECTS UPON MOBILITY IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (01) : 122 - 124

[20] DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1699 - 1701