INSITU ELECTRICAL-RESISTIVITY OF THIN-FILM BETA-NIAL UNDER AR IRRADIATION AT 77-K

被引：8

作者：

DACOSTA, JATB ^{[1
]}

VASCONCELLOS, MAZ ^{[1
]}

TEIXEIRA, SR ^{[1
]}

SCHERER, C ^{[1
]}

BAIBICH, MN ^{[1
]}

机构：

[1] UNIV FED RIO GRANDE SUL,INST FIS,BR-91500 PORTO ALEGRE,RS,BRAZIL

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.45.9626

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the dose dependence of the in situ electrical resistivity of a thin-film NiAl alloy under 120-keV-Ar-ion irradiation at 77 K. The results show two different behaviors. First, the values of resistivity increase, exhibiting a maximum, and then, for higher doses, the electrical resistivity decreases down to saturation. Our results are interpreted in terms of simple composite models that assume local transformation of the solid by successive ion impacts.

引用

页码：9626 / 9628

页数：3

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