PLASMA POLYMERIZATION OF FLUOROCARBONS IN RF CAPACITIVELY COUPLED DIODE SYSTEM

[1] BUBECK C, 1980, AUG MITCH SHEN MEM S

[2] PLASMA SHEATH FORMATION BY RADIO-FREQUENCY FIELDS [J]. PHYSICS OF FLUIDS, 1963, 6 (09) : 1346 - 1355

[3] FLOW-RATE EFFECTS IN PLASMA ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 329 - 332

[4] CHUANG TJ, 1980, 8TH INT VAC C CANN

[5] CHUANG TJ, 1980, 40TH ANN C PHYS EL

[6] CLARK DT, P ACS S PHOTON ELECT

[7] Coburn J. W., 1974, Japanese Journal of Applied Physics, P501

[8] POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 4965 - 4971

[9] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[10] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 33 - 41

[1] BUBECK C, 1980, AUG MITCH SHEN MEM S

[2] PLASMA SHEATH FORMATION BY RADIO-FREQUENCY FIELDS [J]. PHYSICS OF FLUIDS, 1963, 6 (09) : 1346 - 1355

[3] FLOW-RATE EFFECTS IN PLASMA ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 329 - 332

[4] CHUANG TJ, 1980, 8TH INT VAC C CANN

[5] CHUANG TJ, 1980, 40TH ANN C PHYS EL

[6] CLARK DT, P ACS S PHOTON ELECT

[7] Coburn J. W., 1974, Japanese Journal of Applied Physics, P501

[8] POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 4965 - 4971

[9] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[10] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 33 - 41