23 GHZ BANDWIDTH MONOLITHIC PHOTORECEIVER COMPATIBLE WITH INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR FABRICATION PROCESS

被引：19

作者：

SANO, E

YONEYAMA, M

YAMAHATA, S

MATSUOKA, Y

机构：

[1] NTT LSI Laboratories, 3-1 Morinosato IVakamiya

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 24期

关键词：

INTEGRATED OPTOELECTRONICS; OPTICAL RECEIVERS; PIN PHOTODIODES; HETEROJUNCTION BIPOLAR TRANSISTORS;

D O I：

10.1049/el:19941405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 23GHz bandwidth is achieved with a pin/DHBT photoreceiver in which the pin-PD is formed on The layer structure that corresponds to the base-to-collector region of the DHBTs. This is the widest bandwidth yet reported for monolithic photoreceivers.

引用

页码：2064 / 2065

页数：2

共 9 条

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